参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO- 160 V
Collector- Emitter Voltage VCEO Max- 150 V
ConfigurationDual
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Length3 mm
Width1.6 mm
Height1.1 mm
Collector-Emitter Saturation Voltage- 500 mV
DC Collector/Base Gain hfe Min50 at - 1 mA, - 5 V
Minimum Operating Temperature- 55 C
Package / CaseSOT-26-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
PackagingMouseReel
PackagingReel
PackagingCut Tape
ImageDiodes Incorporated DMMT5401-7-F
BrandDiodes Incorporated
RoHS Details
DescriptionBipolar Transistors - BJT MATCHED PNP SM SIGNAL TRANS
Product CategoryBipolar Transistors - BJT
SeriesDMMT5401
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.001058 oz
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)