参数项参数值
参数项参数值
DC Current Gain hFE Max560
Gain Bandwidth Product fT360 MHz, 400 MHz
Collector- Base Voltage VCBO- 50 V, 100 V
Collector- Emitter Voltage VCEO Max- 50 V, 100 V
Continuous Collector Current- 5 A, 5 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 6 V, 6 V
Collector-Emitter Saturation Voltage- 255 mV, 160 mV
DC Collector/Base Gain hfe Min200
MXHTS85412999
KRHTS8541299000
Package / CaseTO-252-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingCut Tape
PackagingReel
Factory Pack Quantity700
CNHTS8541210000
DescriptionBipolar Transistors - BJT BIP PNP 5A 50V
BrandON Semiconductor
ImageON Semiconductor 2SA2039-TL-E
Series2SA2039
Product TypeBJTs - Bipolar Transistors
TARIC8541290000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.063493 oz
SubcategoryTransistors
Pd - Power Dissipation15 W
USHTS8541290075
Moisture Sensitivity Level1 (Unlimited)