参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S
TechnologySi
ConfigurationSingle
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time19 ns
Vgs - Gate-Source Voltage- 30 V, + 30 V
MXHTS85412999
Typical Turn-On Delay Time15 ns
Width3.3 mm
KRHTS8541299000
Height0.8 mm
JPHTS8541290100
Length3.3 mm
CNHTS8541290000
CAHTS8541290000
Qg - Gate Charge9 nC
Product TypeMOSFET
Package / CasePower-33-8
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Fall Time13 ns
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.007408 oz
Factory Pack Quantity3000
RoHS Details
SeriesFDMC2523P
ImageON Semiconductor / Fairchild FDMC2523P
Pd - Power Dissipation42 W
Product CategoryMOSFET
TypeQFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET -150V P-Channel QFET
TradenameQFET
Number of Channels1 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)