参数项参数值
参数项参数值
Forward Transconductance - Min1.4 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current3 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time19 ns
Width3.3 mm
Height0.8 mm
Length3.3 mm
MXHTS85412999
Qg - Gate Charge9 nC
KRHTS8541299000
Package / CasePower-33-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time13 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.007408 oz
RoHS Details
SeriesFDMC2523P
Factory Pack Quantity3000
ImageON Semiconductor / Fairchild FDMC2523P
Pd - Power Dissipation42 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage150 V
DescriptionMOSFET -150V P-Channel QFET
TradenameQFET
Number of Channels1 Channel
Rise Time11 ns
TypeQFET
Moisture Sensitivity Level1 (Unlimited)