参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 150 mA, 10 V
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO75 V
Maximum DC Collector Current0.6 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current600 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.3 V
DC Collector/Base Gain hfe Min35 at 100 uA, 10 V
MXHTS85412101
KRHTS8541219000
Package / CaseX2-DFN1006-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541210000
RoHS Details
Unit Weight0.317466 oz
SeriesMMBT2222
BrandDiodes Incorporated
ImageDiodes Incorporated MMBT2222ALP4-7B
ManufacturerDiodes Incorporated
Pd - Power Dissipation1 W
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors
USHTS8541210075
DescriptionBipolar Transistors - BJT General Purpose Tran X2-DFN1006-3 T&R 10K
Moisture Sensitivity Level1 (Unlimited)