参数项参数值
参数项参数值
Forward Transconductance - Min400 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time5 ns
Rds On - Drain-Source Resistance1.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
MXHTS85412999
KRHTS8541219000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSOT-416-3
JPHTS8541290100
CAHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CNHTS8541210000
Factory Pack Quantity3000
BrandROHM Semiconductor
Product TypeMOSFET
Channel ModeEnhancement
DescriptionMOSFET 1.2V Drive Nch MOSFET
ManufacturerROHM Semiconductor
TARIC8541290000
Product CategoryMOSFET
Fall Time10 ns
RoHS Details
Unit Weight0.000212 oz
SubcategoryMOSFETs
Part # AliasesRE1C002UN
Pd - Power Dissipation150 mW
USHTS8541210095
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)