参数项参数值
参数项参数值
Half Intensity Angle Degrees20 deg
If - Forward Current50 mA
Peak Wavelength940 nm
Photocurrent60 uA
Width5.75 mm
Length5.75 mm
Height8.6 mm
MXHTS85411001
KRHTS8541109000
Mounting StyleThrough Hole
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 100 C
PackagingBulk
Vr - Reverse Voltage60 V
ProductPIN Photodiodes
CNHTS8541409002
BrandVishay Semiconductors
ManufacturerVishay
Factory Pack Quantity4000
TARIC8541409090
Product CategoryPhotodiodes
RoHS Details
Responsivity0.55 A/W
DescriptionPhotodiodes T-1.75 790 to 1050nm +/-20 deg
Fall Time2.5 ns
Product TypePhotodiodes
ImageVishay Semiconductors BPV10NF
SubcategoryOptical Detectors and Sensors
Unit Weight0.017533 oz
USHTS8541100050
Pd - Power Dissipation215 mW
Noise Equivalent Power - NEP3E-14 W/sqrt Hz
Dark Current1 nA
Vf - Forward Voltage1 V
Rise Time2.5 ns
Moisture Sensitivity Level1 (Unlimited)