参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current59 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time140 ns
Transistor Type1 N-Channel
Typical Turn-Off Delay Time120 ns
Width5 mm
Height20.1 mm
Length16.2 mm
MXHTS85412999
Qg - Gate Charge100 nC
KRHTS8541299000
Package / CaseTO-3PN-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
JPHTS8541290100
CNHTS8541210000
Minimum Operating Temperature- 55 C
CAHTS8541290000
Channel ModeEnhancement
Fall Time200 ns
PackagingTube
TARIC8541290000
SeriesFDA59N30
BrandON Semiconductor / Fairchild
Unit Weight0.225789 oz
RoHS Details
Factory Pack Quantity450
ImageON Semiconductor / Fairchild FDA59N30
Pd - Power Dissipation500 W
Product CategoryMOSFET
Part # AliasesFDA59N30_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage300 V
DescriptionMOSFET 500V NCH MOSFET
Number of Channels1 Channel
Rise Time575 ns
Moisture Sensitivity LevelNot Applicable