参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current36 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time70 ns
Width16.26 mm
Rds On - Drain-Source Resistance100 MOhms
Typical Turn-Off Delay Time400 ns
Height5.31 mm
Length21.46 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge252 nC
Mounting StyleThrough Hole
Package / CaseTO-247-3
JPHTS8541290100
CAHTS8541290000
PackagingTube
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Factory Pack Quantity1
CNHTS8541290000
DescriptionMOSFET Power MOSFET - CoolMOS
BrandMicrochip / Microsemi
Channel ModeEnhancement
ImageMicrochip / Microsemi APT36N90BC3G
Product TypeMOSFET
TARIC8541290000
Fall Time25 ns
ManufacturerMicrochip
Product CategoryMOSFET
RoHS Details
Unit Weight1.340411 oz
SubcategoryMOSFETs
Pd - Power Dissipation390 W
USHTS8541290095
Vds - Drain-Source Breakdown Voltage900 V
Rise Time20 ns
Moisture Sensitivity Level1 (Unlimited)