参数项参数值
参数项参数值
Forward Transconductance - Min4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityP-Channel
Height2.3 mm
Length6.5 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
ManufacturerInfineon
KRHTS8541299000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Typical Turn-On Delay Time12 ns
Factory Pack Quantity2500
BrandInfineon Technologies
Minimum Operating Temperature- 55 C
JPHTS8541290100
Rds On - Drain-Source Resistance100 MOhms
Transistor Type1 P-Channel
Maximum Operating Temperature+ 175 C
Typical Turn-Off Delay Time24.5 ns
Package / CaseTO-252-3
CAHTS8541290000
SubcategoryMOSFETs
TARIC8541290000
RoHS Details
Product TypeMOSFET
Width6.22 mm
Mounting StyleSMD/SMT
ImageInfineon Technologies SPD18P06PGBTMA1
Qg - Gate Charge33 nC
DescriptionMOSFET P-Ch -60V -18.6A DPAK-2
MXHTS85412999
Product CategoryMOSFET
SeriesXPD18P06
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.139332 oz
Fall Time11 ns
CNHTS8541290000
Part # AliasesSPD18P06P G SP000443926
Pd - Power Dissipation80 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.8 ns