参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
TechnologySi
ConfigurationSingle
Transistor PolarityNPN
Collector-Emitter Saturation Voltage0.6 V
Emitter- Base Voltage VEBO6 V
DC Collector/Base Gain hfe Min420
Mounting StyleSMD/SMT
Width1.3 mm
Height0.94 mm
JPHTS8541210101
Length2.9 mm
Maximum Operating Temperature+ 150 C
MXHTS85412101
SeriesBC847CL
Factory Pack Quantity10000
KRHTS8541219000
Minimum Operating Temperature- 55 C
CAHTS8541210000
Package / CaseSOT-23-3
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000282 oz
RoHS Details
Pd - Power Dissipation225 mW
BrandON Semiconductor
USHTS8541210075
ImageON Semiconductor BC847CLT3G
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
Moisture Sensitivity Level1 (Unlimited)