参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current8 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance17.8 mOhms
Transistor Type2 N-Channel
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge24 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon Technologies IRF7351TRPBF
TARIC8541290000
RoHS Details
Unit Weight0.005820 oz
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 60V 8A 17.8mOhm 24nC Dual
Vds - Drain-Source Breakdown Voltage60 V
USHTS8541290095
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)