参数项参数值
参数项参数值
DC Current Gain hFE Max250
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current1.5 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current1.5 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
DC Collector/Base Gain hfe Min40
Width3.56 mm
Height1.6 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.003951 oz
Pd - Power Dissipation1.5 W
ImageON Semiconductor / Fairchild BCP54
SeriesBCP54
BrandON Semiconductor / Fairchild
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerON Semiconductor
USHTS8541290095
DescriptionBipolar Transistors - BJT SOT-223 NPN GP AMP