SI1022R-T1-GE3

SI1022R-T1-GE3

厂牌：威世(VISHAY)

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000042584796

描述：Trans MOSFET N-CH 60V 0.33A 3-Pin SC-75A T/R

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商品参数

参数项参数值

参数项参数值

ConfigurationSingle

Forward Transconductance - Min100 mS

Vgs th - Gate-Source Threshold Voltage1 V

TechnologySi

Transistor PolarityN-Channel

Id - Continuous Drain Current330 mA

Vgs - Gate-Source Voltage- 20 V, + 20 V

KRHTS8541219000

Minimum Operating Temperature- 55 C

JPHTS8541210101

Typical Turn-On Delay Time25 ns

CAHTS8541210000

Rds On - Drain-Source Resistance2.25 Ohms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time35 ns

Package / CaseSOT-416-3

RoHS Details

ImageVishay Semiconductors SI1022R-T1-GE3

Factory Pack Quantity3000

PackagingMouseReel

PackagingReel

PackagingCut Tape

Maximum Operating Temperature+ 150 C

TARIC8541210000

ManufacturerVishay

BrandVishay Semiconductors

SubcategoryMOSFETs

Mounting StyleSMD/SMT

Product CategoryMOSFET

DescriptionMOSFET 60V Vds 20V Vgs SC75A

Qg - Gate Charge0.6 nC

MXHTS85412101

SeriesSI1

Product TypeMOSFET

USHTS8541210095

Channel ModeEnhancement

Unit Weight0.001840 oz

CNHTS8541210000

Part # AliasesSI1022R-GE3

Pd - Power Dissipation250 mW

TradenameTrenchFET

Vds - Drain-Source Breakdown Voltage60 V

Number of Channels1 Channel

Moisture Sensitivity Level1 (Unlimited)