参数项参数值
参数项参数值
Forward Transconductance - Min75 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current100 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time23 ns
Rds On - Drain-Source Resistance1.45 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time43 ns
MXHTS85412999
Qg - Gate Charge89 nC
CNHTS8541290000
Package / CasePG-TDSON-8
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Fall Time11 ns
TARIC8541290000
RoHS Details
BrandInfineon Technologies
ImageInfineon Technologies BSC014N06NSTATMA1
Unit Weight0.004239 oz
Product TypeMOSFET
Product CategoryMOSFET
Factory Pack Quantity5000
SubcategoryMOSFETs
ManufacturerInfineon
Part # AliasesBSC014N06NST SP001657072
DescriptionMOSFET TRENCH 40<-<100V
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time10 ns
Moisture Sensitivity Level1 (Unlimited)