参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO- 40 V
Maximum DC Collector Current- 800 mA
Collector- Emitter Voltage VCEO Max- 40 V
KRHTS8541219000
TechnologySi
Transistor PolarityPNP
JPHTS8541210101
Emitter- Base Voltage VEBO- 5 V
CAHTS8541210000
Minimum Operating Temperature- 55 C
QualificationAEC-Q101
ImageON Semiconductor SMMBT3906LT3G
Height0.94 mm
Length2.9 mm
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
Collector-Emitter Saturation Voltage0.4 V
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min30
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
Width1.3 mm
Product CategoryBipolar Transistors - BJT
Factory Pack Quantity10000
Mounting StyleSMD/SMT
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
RoHS Details
TARIC8541210000
MXHTS85412101
SeriesMMBT3906L
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000282 oz
CNHTS8541210000
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)