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NSS1C201MZ4T1G
厂牌：onsemi
包装：REEL 1
类目：元器件 > 分立器件 > 双极晶体管
编号：B000042653844
描述：Trans GP BJT NPN 100V 2A 2000mW 4-Pin(3+Tab) SOT-223 T/RBipolar Transistors - BJT 100V, NPN Low VCE Trans.
商品参数
参数项参数值
参数项参数值
DC Current Gain hFE Max150
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO140 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width3.5 mm
Collector-Emitter Saturation Voltage180 mV
Height1.57 mm
DC Collector/Base Gain hfe Min120
MXHTS85412999
Length6.5 mm
KRHTS8541219000
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Maximum Operating Temperature+ 150 C
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor NSS1C201MZ4T1G
TARIC8541290000
RoHS Details
SeriesNSS1C201MZ4
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Unit Weight0.003951 oz
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 100V, NPN Low VCE Trans.
USHTS8541210075
Pd - Power Dissipation2000 mW
Moisture Sensitivity Level1 (Unlimited)