参数项参数值
参数项参数值
DC Current Gain hFE Max150
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO140 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max100 V
ConfigurationSingle
Transistor PolarityNPN
TechnologySi
Emitter- Base Voltage VEBO7 V
Height1.57 mm
Width3.5 mm
Collector-Emitter Saturation Voltage180 mV
DC Collector/Base Gain hfe Min120
Length6.5 mm
Maximum Operating Temperature+ 150 C
ImageON Semiconductor NSS1C201MZ4T1G
TARIC8541290000
MXHTS85412999
KRHTS8541219000
Minimum Operating Temperature- 55 C
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Package / CaseSOT-223-4
PackagingCut Tape
PackagingMouseReel
PackagingReel
CNHTS8541210000
BrandON Semiconductor
RoHS Details
Product TypeBJTs - Bipolar Transistors
Unit Weight0.003951 oz
SeriesNSS1C201MZ4
SubcategoryTransistors
Factory Pack Quantity1000
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 100V, NPN Low VCE Trans.
USHTS8541210075
Pd - Power Dissipation2000 mW
Moisture Sensitivity Level1 (Unlimited)