参数项参数值
参数项参数值
ConfigurationSingle
KRHTS8541219000
JPHTS8541290100
Forward Transconductance - Min300 ms
CAHTS8541290000
ImageInfineon Technologies BSR316PH6327XTSA1
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
DescriptionMOSFET SMALL SIGNAL+P-CH
Transistor PolarityP-Channel
Id - Continuous Drain Current360 mA
Vgs - Gate-Source Voltage- 20 V, + 20 V
Minimum Operating Temperature- 55 C
ProductMOSFETs
Height1.1 mm
Length3 mm
Typical Turn-On Delay Time5 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
Rds On - Drain-Source Resistance1.8 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time71 ns
Package / CaseSC-59-3
Product CategoryMOSFET
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Width1.6 mm
Mounting StyleSMD/SMT
Product TypeMOSFET
BrandInfineon Technologies
RoHS Details
MXHTS85412999
ManufacturerInfineon
TARIC8541290000
Qg - Gate Charge5.3 nC
SubcategoryMOSFETs
Channel ModeEnhancement
USHTS8541210095
Fall Time26 ns
Unit Weight0.001411 oz
CNHTS8541210000
Part # AliasesBSR316P H6327 SP001101034
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time6 ns
TypeSmall Signal Transistor