参数项参数值
参数项参数值
Forward Transconductance - Min3.7 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current5.7 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 30 V, + 30 V
Typical Turn-On Delay Time15 ns
Rds On - Drain-Source Resistance690 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time30 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge25 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541290000
CAHTS8541290000
Channel ModeEnhancement
Fall Time42 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.016932 oz
RoHS Details
SeriesFQD7P20
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FQD7P20TM
Pd - Power Dissipation2.5 W
Product CategoryMOSFET
Part # AliasesFQD7P20TM_NL
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage200 V
DescriptionMOSFET 200V P-Channel QFET
Number of Channels1 Channel
Rise Time110 ns
TypeMOSFET