参数项参数值
参数项参数值
Forward Transconductance - Min1.1 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current3.6 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.8 ns
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time7.3 ns
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge20 nC
Package / CaseTO-252-3
Mounting StyleSMD/SMT
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time19 ns
PackagingCut Tape
PackagingReel
PackagingMouseReel
ImageVishay Semiconductors IRFR9220TRPBF
TARIC8541290000
Unit Weight0.050717 oz
RoHS Details
SeriesIRFR/U
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation42 W
BrandVishay Semiconductors
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 200V P-CH HEXFET MOSFET D
ManufacturerVishay
Vds - Drain-Source Breakdown Voltage200 V
Number of Channels1 Channel
USHTS8541290095
Rise Time27 ns
Moisture Sensitivity Level1 (Unlimited)