DMN3024LSD-13

厂牌:DIODES INC.
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000042768476
描述:Trans MOSFET N-CH 30V 6.8A 8-Pin SO T/R
最新价格近期成交10单+
数量价格(含税)
1¥9.0023
10¥5.6123
100¥3.6661
500¥2.8125
1000¥2.1721
5000¥2.0340
库存:1,482交期:14起订:100增量:1
数量:
X
3.6661(单价)
合计:
¥366.61
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min16.5 S, 16.5 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current7.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
Typical Turn-On Delay Time2.9 ns, 2.9 ns
ManufacturerDiodes Incorporated
Minimum Operating Temperature- 55 C
JPHTS8541290100
RoHS Details
ProductMOSFET Small Signal
CAHTS8541290000
Rds On - Drain-Source Resistance24 mOhms, 24 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time16 ns, 16 ns
Package / CaseSO-8
Factory Pack Quantity2500
BrandDiodes Incorporated
TARIC8541290000
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageDiodes Incorporated DMN3024LSD-13
SubcategoryMOSFETs
Qg - Gate Charge12.9 nC
Product CategoryMOSFET
DescriptionMOSFET ENHANCE MODE MOSFET 30V DUAL N-CHANNEL
Product TypeMOSFET
MXHTS85412999
SeriesDMN3024
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.002610 oz
Fall Time8 ns, 8 ns
CNHTS8541290000
Pd - Power Dissipation1.3 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels2 Channel
Rise Time3.3 ns, 3.3 ns
Moisture Sensitivity Level1 (Unlimited)