参数项参数值
参数项参数值
Forward Transconductance - Min82 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current71 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
MXHTS85412999
Rds On - Drain-Source Resistance8.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
KRHTS8541299000
Qg - Gate Charge20 nC
Package / CaseSO-8
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
Fall Time4 ns
ImageON Semiconductor NTMFS5C670NLT1G
TARIC8541290000
RoHS Details
Factory Pack Quantity1500
Unit Weight0.003781 oz
ManufacturerON Semiconductor
BrandON Semiconductor
DescriptionMOSFET NFET SO8FL 40V 68A 6.7MOH
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation61 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)