NTMFS5C670NLT1G

厂牌:ONSEMI
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000042782977
描述:ONSEMI - NTMFS5C670NLT1G - 功率场效应管, MOSFET, N通道, 60 V, 71 A, 6100 µohm, DFN, 表面安装 库存分布: Shanghai: 0 Shanghai: 0 Shanghai: 0 Shanghai: 0 UK: 3434 SG: 500; packSize: 1; minimumOrderQty: 100; rohs: YES
最新价格近期成交20单+
数量价格(含税)
1¥7.6715
10¥5.1225
50¥3.5405
200¥3.2394
500¥2.9253
库存:294交期:起订:1增量:1
数量:
X
7.6715(单价)
合计:
¥7.67
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min82 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current71 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time11 ns
MXHTS85412999
Rds On - Drain-Source Resistance8.8 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time15 ns
KRHTS8541299000
Qg - Gate Charge20 nC
Package / CaseSO-8
CNHTS8541290000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
PackagingMouseReel
Fall Time4 ns
ImageON Semiconductor NTMFS5C670NLT1G
TARIC8541290000
RoHS Details
Factory Pack Quantity1500
Unit Weight0.003781 oz
ManufacturerON Semiconductor
BrandON Semiconductor
DescriptionMOSFET NFET SO8FL 40V 68A 6.7MOH
Product TypeMOSFET
Product CategoryMOSFET
Pd - Power Dissipation61 W
SubcategoryMOSFETs
USHTS8541290095
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)