参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time14 ns
Rds On - Drain-Source Resistance190 mOhms
Transistor Type1 N-Channel Power MOSFET
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge29 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541210000
Fall Time15 ns
PackagingTube
TARIC8541290000
ImageSTMicroelectronics STF24N60M2
Unit Weight0.011640 oz
SeriesSTF24N60M2
Factory Pack Quantity1000
Pd - Power Dissipation30 W
BrandSTMicroelectronics
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerSTMicroelectronics
DescriptionMOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
Vds - Drain-Source Breakdown Voltage600 V
USHTS8541290095
TradenameMDmesh
Number of Channels1 Channel
Rise Time9 ns