参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage650 mV
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current76 A
Vgs - Gate-Source Voltage- 12 V, + 12 V
MXHTS85423901
Width3 mm
Typical Turn-On Delay Time10 ns
Length3.15 mm
Height0.9 mm
KRHTS8541299000
Rds On - Drain-Source Resistance8.9 mOhms
Transistor Type1 P-Channel Power MOSFET
Typical Turn-Off Delay Time25 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CNHTS8541290000
CAHTS8541290000
Package / CaseVSONP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 125 C
Qg - Gate Charge7.5 nC
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity2500
ImageTexas Instruments CSD25402Q3A
Product CategoryMOSFET
BrandTexas Instruments
RoHS Details
TARIC8542399000
SeriesCSD25402Q3A
Product TypeMOSFET
DescriptionMOSFET P-CH Pwr MOSFET
SubcategoryMOSFETs
ManufacturerTexas Instruments
Channel ModeEnhancement
Fall Time12 ns
Unit Weight0.000981 oz
USHTS8541290095
Pd - Power Dissipation69 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time7 ns
Moisture Sensitivity Level1 (Unlimited)