SIR632DP-T1-RE3

SIR632DP-T1-RE3

厂牌：Vishay Semiconductors

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000042807958

描述：Trans MOSFET N-CH 150V 29A 8-Pin PowerPAK SO EP T/R

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min18 S

TechnologySi

ConfigurationSingle

Id - Continuous Drain Current29 A

Transistor PolarityN-Channel

Vgs th - Gate-Source Threshold Voltage2 V

Rds On - Drain-Source Resistance28.5 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time9 ns

Vgs - Gate-Source Voltage- 20 V, + 20 V

MXHTS85412999

Typical Turn-On Delay Time9 ns

CNHTS8541290000

ImageVishay Semiconductors SIR632DP-T1-RE3

SeriesSIR

BrandVishay Semiconductors

KRHTS8541299000

Unit Weight0.017870 oz

Qg - Gate Charge21 nC

USHTS8541290095

Package / CasePowerPAK-SO-8

Mounting StyleSMD/SMT

Channel ModeEnhancement

JPHTS8541290100

Maximum Operating Temperature+ 150 C

CAHTS8541290000

Minimum Operating Temperature- 55 C

TARIC8541290000

PackagingCut Tape

PackagingReel

RoHS Details

Fall Time21 ns

Product CategoryMOSFET

Product TypeMOSFET

Factory Pack Quantity3000

SubcategoryMOSFETs

ManufacturerVishay

Pd - Power Dissipation69.5 W

DescriptionMOSFET 150V Vds 20V Vgs PowerPAK SO-8

Vds - Drain-Source Breakdown Voltage150 V

TradenameTrenchFET, PowerPAK

Number of Channels1 Channel

Rise Time27 ns

Moisture Sensitivity Level1 (Unlimited)