参数项参数值
参数项参数值
Forward Transconductance - Min71 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time18 ns
Width9.25 mm
Height4.4 mm
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
MXHTS85412999
Length10 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge76 nC
Mounting StyleSMD/SMT
Package / CaseTO-263-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
CNHTS8541290000
ImageInfineon / IR IRF3205ZSTRLPBF
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
Fall Time67 ns
Factory Pack Quantity800
SubcategoryMOSFETs
Product CategoryMOSFET
BrandInfineon / IR
Unit Weight0.139332 oz
Product TypeMOSFET
DescriptionMOSFET MOSFT 55V 110A 6.5mOhm 76nC Qg
ManufacturerInfineon
USHTS8541290095
Pd - Power Dissipation170 W
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time95 ns
Moisture Sensitivity Level1 (Unlimited)