参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current110 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance8 mOhms
Transistor Type1 N-Channel
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge97.3 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541210000
PackagingTube
ImageInfineon Technologies IRF3205PBF
TARIC8541290000
RoHS Details
Unit Weight0.067021 oz
Factory Pack Quantity1000
Product TypeMOSFET
Pd - Power Dissipation150 W
BrandInfineon Technologies
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT 55V 98A 8mOhm 97.3nC
Vds - Drain-Source Breakdown Voltage55 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)