参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current200 mA
Transistor PolarityP-Channel
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Height0.5 mm
Rds On - Drain-Source Resistance1.4 Ohms
Transistor Type1 P-Channel MOSFET
Typical Turn-Off Delay Time30 ns
Width0.8 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85412999
Typical Turn-On Delay Time8 ns
Package / CaseSOT-723-3
Length1.2 mm
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
KRHTS8541299000
CAHTS8541290000
RoHS Details
JPHTS8541290100
Qg - Gate Charge-
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
ProductMOSFET Small Signal
Channel ModeEnhancement
CNHTS8541210000
ImageROHM Semiconductor RSM002P03T2L
SubcategoryMOSFETs
TARIC8541290000
Product CategoryMOSFET
DescriptionMOSFET P-CH 30V 200MA
Unit Weight0.000282 oz
BrandROHM Semiconductor
Factory Pack Quantity8000
Fall Time40 ns
ManufacturerROHM Semiconductor
SeriesRSM002P03
Product TypeMOSFET
USHTS8541290095
Part # AliasesRSM002P03
Pd - Power Dissipation150 mW
TypeMOSFET
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time5 ns
Moisture Sensitivity Level1 (Unlimited)