参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current50 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
MXHTS85423901
Typical Turn-On Delay Time3.2 ns
Length6 mm
Height1 mm
KRHTS8541299000
Rds On - Drain-Source Resistance6.6 mOhms
Transistor Type1 N-Channel Power MOSFET
Typical Turn-Off Delay Time12 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541290000
Package / CaseVSONP-8
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge16 nC
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity2500
ImageTexas Instruments CSD18504Q5A
BrandTexas Instruments
Product CategoryMOSFET
TARIC8542399000
SeriesCSD18504Q5A
RoHS Details
DescriptionMOSFET 40V N-Channel NexFET Power MOSFET
Product TypeMOSFET
ManufacturerTexas Instruments
SubcategoryMOSFETs
Development KitEM1402EVM
Channel ModeEnhancement
Unit Weight0.000847 oz
USHTS8541290095
Pd - Power Dissipation77 W
TradenameNexFET
Vds - Drain-Source Breakdown Voltage40 V
Number of Channels1 Channel
Rise Time6.8 ns
Moisture Sensitivity Level1 (Unlimited)