参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current9.2 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.4 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance18 mOhms
KRHTS8541299000
Transistor Type1 N-Channel
Typical Turn-Off Delay Time13 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSO-8
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge17 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMT6016LSS-13
Factory Pack Quantity2500
SeriesDMT60
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET 60V N-Ch Enh FET 16mOhm 10Vgs 8.9A
Channel ModeEnhancement
Fall Time7 ns
USHTS8541290095
Unit Weight0.002610 oz
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5.2 ns
Moisture Sensitivity Level1 (Unlimited)