参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO80 V
ConfigurationSingle
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current10 A
Transistor PolarityPNP
TechnologySi
Emitter- Base Voltage VEBO5 V
Width4.83 mm
Collector-Emitter Saturation Voltage1 V
PackagingTube
DC Collector/Base Gain hfe Min60
Mounting StyleThrough Hole
Height15.75 mm
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
Length10.53 mm
Minimum Operating Temperature- 55 C
Package / CaseTO-220-3
RoHS Details
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 10A 80V 50W PNP
SubcategoryTransistors
ImageON Semiconductor D45H11G
Factory Pack Quantity50
SeriesD45H11
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
Unit Weight0.211644 oz
Pd - Power Dissipation70 W
Moisture Sensitivity LevelNot Applicable