参数项参数值
参数项参数值
Gain Bandwidth Product fT40 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current10 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current10 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width4.83 mm
Height15.75 mm
Length10.53 mm
Collector-Emitter Saturation Voltage1 V
DC Collector/Base Gain hfe Min60
Minimum Operating Temperature- 55 C
Package / CaseTO-220-3
PackagingTube
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
BrandON Semiconductor
ManufacturerON Semiconductor
RoHS Details
SubcategoryTransistors
ImageON Semiconductor D45H11G
Factory Pack Quantity50
SeriesD45H11
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 10A 80V 50W PNP
Unit Weight0.211644 oz
Pd - Power Dissipation70 W
Moisture Sensitivity LevelNot Applicable