参数项参数值
参数项参数值
Forward Transconductance - Min65 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.7 ns
Width1.3 mm
Height1.1 mm
Rds On - Drain-Source Resistance5.8 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time8.6 ns
MXHTS85412999
Length2.9 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Qg - Gate Charge1.5 nC
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageInfineon Technologies BSS84P H6433
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Channel ModeEnhancement
SeriesBSS84
Fall Time20.5 ns
SubcategoryMOSFETs
Factory Pack Quantity10000
Product CategoryMOSFET
BrandInfineon Technologies
Product TypeMOSFET
Unit Weight0.001764 oz
DescriptionMOSFET P-Ch -60V -170mA SOT-23-3
ManufacturerInfineon
USHTS8541290095
Part # AliasesBSS84PH6433XT SP000924084 BSS84PH6433XTMA1
Pd - Power Dissipation360 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time16.2 ns