参数项参数值
参数项参数值
Forward Transconductance - Min80 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current150 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time6.7 ns
Rds On - Drain-Source Resistance4.6 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time8.6 ns
Width1.25 mm
Height0.9 mm
Length2 mm
MXHTS85412999
Qg - Gate Charge1.5 nC
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time20.5 ns
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation300 mW
SeriesBSS84
Part # AliasesBSS84PWH6327XT SP000917564 BSS84PWH6327XTSA1
ImageInfineon Technologies BSS84PW H6327
BrandInfineon Technologies
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time16.2 ns
USHTS8541290095
DescriptionMOSFET P-Ch -60V 150mA SOT-323-3