参数项参数值
参数项参数值
Forward Transconductance - Min65 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current170 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time6.7 ns
Rds On - Drain-Source Resistance5.8 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time8.6 ns
Height1.1 mm
Width1.3 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge1 nC
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Fall Time20.5 ns
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541290000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation360 mW
SeriesBSS84
BrandInfineon Technologies
Part # AliasesBSS84P H6327 SP000929186
ImageInfineon Technologies BSS84PH6327XTSA2
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
USHTS8541290095
Number of Channels1 Channel
Rise Time16.2 ns
DescriptionMOSFET P-Ch -60V -170mA SOT-23-3
Moisture Sensitivity Level1 (Unlimited)