参数项参数值
参数项参数值
Forward Transconductance - Min0.05 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage800 mV
TechnologySi
Id - Continuous Drain Current130 mA
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance10 Ohms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time18 ns
MXHTS85412101
KRHTS8541219000
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
ImageDiodes Incorporated BSS84WQ-7-F
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Channel ModeEnhancement
Factory Pack Quantity3000
SeriesBSS84
SubcategoryMOSFETs
Product CategoryMOSFET
BrandDiodes Incorporated
Unit Weight0.000176 oz
ManufacturerDiodes Incorporated
DescriptionMOSFET P-Ch -50V Enh FET 10Ohm -5Vgs -130mA
Product TypeMOSFET
USHTS8541210095
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage50 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)