参数项参数值
参数项参数值
DC Current Gain hFE Max900
Gain Bandwidth Product fT160 MHz
Collector- Base Voltage VCBO70 V
Maximum DC Collector Current6.5 A
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.7 mm
Collector-Emitter Saturation Voltage190 mV
Height1 mm
DC Collector/Base Gain hfe Min300
Length3 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity3000
BrandDiodes Incorporated
SeriesZXTN19020
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT NPN 20V HIGH GAIN
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTN19020DFFTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight1.269863 oz
SubcategoryTransistors
Pd - Power Dissipation2000 mW
USHTS8541290095