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SI2324DS-T1-GE3

SI2324DS-T1-GE3

厂牌：VISHAY(威世)
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000043491293
描述：场效应管(MOSFET) SI2324DS-T1-GE3 SOT-23
最新价格近期成交16单+
数量价格（含税）
1¥1.7222
100¥1.3666
750¥1.2223
1500¥1.1557
3000¥1.0956
库存：3交期：3-5Days起订：1增量：1
数量：
X
1.7222（单价）
合计：
￥1.72
商品满500包邮
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Id - Continuous Drain Current2.3 A
Transistor PolarityN-Channel
TechnologySi
Rds On - Drain-Source Resistance234 mOhms
Height1.45 mm
Vgs - Gate-Source Voltage- 20 V, + 20 V
Width1.6 mm
Length2.9 mm
Mounting StyleSMD/SMT
Factory Pack Quantity3000
CNHTS8541290000
MXHTS85412999
KRHTS8541299000
Unit Weight0.000282 oz
Qg - Gate Charge10.4 nC
JPHTS8541290100
Package / CaseSOT-23-3
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ManufacturerVishay
SeriesSI2
PackagingCut Tape
PackagingMouseReel
PackagingReel
Channel ModeEnhancement
TARIC8541290000
Product CategoryMOSFET
BrandVishay Semiconductors
DescriptionMOSFET 100V Vds 20V Vgs SOT-23
ImageVishay Semiconductors SI2324DS-T1-GE3
SubcategoryMOSFETs
RoHS Details
Product TypeMOSFET
USHTS8541290095
Pd - Power Dissipation2.5 W
TradenameTrenchFET
Number of Channels1 Channel