参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current200 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance3.5 Ohms
Typical Turn-Off Delay Time20 ns
Qg - Gate Charge-
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
Unit Weight0.000282 oz
TARIC8541290000
RoHS Details
Pd - Power Dissipation300 mW
ImageDiodes Incorporated BSS138-13-F
Factory Pack Quantity10000
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
Vds - Drain-Source Breakdown Voltage50 V
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Number of Channels1 Channel
USHTS8541210095
Moisture Sensitivity Level1 (Unlimited)