参数项参数值
参数项参数值
DC Current Gain hFE Max300
Gain Bandwidth Product fT105 MHz
Collector- Base Voltage VCBO220 V
Maximum DC Collector Current2 A
Collector- Emitter Voltage VCEO Max200 V
Continuous Collector Current2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO7 V
Collector-Emitter Saturation Voltage260 mV
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Package / CaseSOT-89-3
JPHTS8541290100
CAHTS8541290000
Maximum Operating Temperature+ 150 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Minimum Operating Temperature- 55 C
CNHTS8541290000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXTP032
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 200V PNP Low Vce 2A Ic 160mV Vce 2.4W
ManufacturerDiodes Incorporated
TARIC8541290000
ImageDiodes Incorporated ZXTP03200BZTA
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.004603 oz
SubcategoryTransistors
Pd - Power Dissipation1.1 W
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)