参数项参数值
参数项参数值
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1.5 V
TechnologySi
Id - Continuous Drain Current1.2 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 5 V, + 5 V
Typical Turn-On Delay Time5 us
Rds On - Drain-Source Resistance400 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time45 us
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge-
Mounting StyleSMD/SMT
Package / CaseSM-8
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingReel
PackagingMouseReel
ProductMOSFET Small Signal
CNHTS8541290000
Factory Pack Quantity1000
BrandDiodes Incorporated
SeriesZXMS600
Channel ModeEnhancement
Product CategoryMOSFET
ManufacturerDiodes Incorporated
TARIC8541290000
DescriptionMOSFET 60V N-Ch Intellifet 500mohm 1.2A 210mJ
ImageDiodes Incorporated ZXMS6004DT8TA
Fall Time15 uS
Product TypeMOSFET
RoHS Details
SubcategoryMOSFETs
Unit Weight0.004127 oz
Pd - Power Dissipation1.16 W
USHTS8541290095
TradenameIntelliFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time10 us