参数项参数值
参数项参数值
Forward Transconductance - Min3.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.7 V
TechnologySi
Id - Continuous Drain Current1.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance345 mOhms
Typical Turn-Off Delay Time9 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge3 nC
Package / CaseDFN-1010-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandNexperia
CNHTS8541210000
ManufacturerNexperia
Factory Pack Quantity5000
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541210000
Channel ModeEnhancement
RoHS Details
Fall Time3 ns
ImageNexperia PMXB360ENEAZ
DescriptionMOSFET 80 V, N-channel Trench MOSFET
SubcategoryMOSFETs
USHTS8541290095
Part # Aliases934067475147
Pd - Power Dissipation400 mW
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time3.5 ns