PMXB360ENEAZ

厂牌:NEXPERIA
包装:REEL 1
类目:元器件 > 分立器件 > MOSFET
编号:B000043637629
描述:Trans MOSFET N-CH 80V 1.1A Automotive 3-Pin DFN-D EP T/R
最新价格近期成交48单+
数量价格(含税)
5¥7.7216
50¥3.4653
250¥3.0509
1000¥2.2098
3000¥1.7325
库存:4交期:14起订:5增量:5
数量:
X
7.7216(单价)
合计:
¥38.61
商品满500包邮
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min3.2 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.7 V
TechnologySi
Id - Continuous Drain Current1.1 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Rds On - Drain-Source Resistance345 mOhms
Typical Turn-Off Delay Time9 ns
MXHTS85412101
KRHTS8541299000
Qg - Gate Charge3 nC
Package / CaseDFN-1010-3
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
BrandNexperia
CNHTS8541210000
ManufacturerNexperia
Factory Pack Quantity5000
Product TypeMOSFET
Product CategoryMOSFET
TARIC8541210000
Channel ModeEnhancement
RoHS Details
Fall Time3 ns
ImageNexperia PMXB360ENEAZ
DescriptionMOSFET 80 V, N-channel Trench MOSFET
SubcategoryMOSFETs
USHTS8541290095
Part # Aliases934067475147
Pd - Power Dissipation400 mW
Vds - Drain-Source Breakdown Voltage80 V
Number of Channels1 Channel
Rise Time3.5 ns