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SI9945BDY-T1-GE3
厂牌：Vishay Semiconductors
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000043638239
描述：MOSFET DUAL N-CH 60V 5.3A 8-SOIC
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min15 S
ConfigurationDual
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current5.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
JPHTS8541210101
Typical Turn-On Delay Time15 ns, 20 ns
Minimum Operating Temperature- 55 C
CAHTS8541210000
Rds On - Drain-Source Resistance58 mOhms
Transistor Type2 N-Channel
Typical Turn-Off Delay Time10 ns, 15 ns
Package / CaseSO-8
RoHS Details
Factory Pack Quantity2500
ImageVishay Semiconductors SI9945BDY-T1-GE3
PackagingMouseReel
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
TARIC8541290000
Mounting StyleSMD/SMT
ManufacturerVishay
BrandVishay Semiconductors
DescriptionMOSFET 60V Vds 20V Vgs SO-8
SubcategoryMOSFETs
Product CategoryMOSFET
Qg - Gate Charge13 nC
MXHTS85412101
SeriesSI9
Product TypeMOSFET
Channel ModeEnhancement
Unit Weight0.006596 oz
Fall Time10 ns
CNHTS8541290000
Part # AliasesSI9945BDY-GE3
Pd - Power Dissipation3.1 W
TradenameTrenchFET
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels2 Channel
Rise Time15 ns, 65 ns