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IRF640PBF
厂牌：威世(VISHAY)
包装：TUBE 1
类目：元器件 > 分立器件 > MOSFET
编号：B000043638616
描述：MOSFET N-CH 200V 18A TO-220AB
商品参数
参数项参数值
参数项参数值
Forward Transconductance - Min0.8 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2 V
TechnologySi
Id - Continuous Drain Current3.3 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8.2 ns
Rds On - Drain-Source Resistance1.5 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time14 ns
Width4.7 mm
Height15.49 mm
MXHTS85412999
Length10.41 mm
KRHTS8541299000
Qg - Gate Charge8.2 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
Fall Time8.9 ns
PackagingTube
ImageVishay Semiconductors IRF640PBF
TARIC8541290000
Unit Weight0.211644 oz
RoHS Details
SeriesIRF
Factory Pack Quantity50
Product TypeMOSFET
Pd - Power Dissipation36 W
BrandVishay Semiconductors
SubcategoryMOSFETs
Product CategoryMOSFET
DescriptionMOSFET 200V N-CH HEXFET
ManufacturerVishay
Vds - Drain-Source Breakdown Voltage200 V
USHTS8541290095
Number of Channels1 Channel
Rise Time17 ns
Moisture Sensitivity Level1 (Unlimited)