MMDT5451-7-F

厂牌：DIODES(美台)

包装：REEL 1

类目：元器件 > 分立器件 > 双极晶体管

编号：B000043638843

描述：TRANS NPN/PNP 160V/150V SOT363Bipolar Transistors - BJT 160 / 160V 200mW

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商品参数

参数项参数值

DC Current Gain hFE Max240

Gain Bandwidth Product fT300 MHz

Collector- Base Voltage VCBO- 160 V

Maximum DC Collector Current0.2 A

Collector- Emitter Voltage VCEO Max- 150 V

Continuous Collector Current- 0.2 A

ConfigurationDual

TechnologySi

Transistor PolarityNPN, PNP

Emitter- Base Voltage VEBO- 5 V

MXHTS85412101

Length2.2 mm

Width1.35 mm

Height1 mm

KRHTS8541219000

Collector-Emitter Saturation Voltage0.2 V

DC Collector/Base Gain hfe Min60

Minimum Operating Temperature- 55 C

JPHTS8541210101

Package / CaseSOT-363-6

CAHTS8541210000

CNHTS8541210000

Mounting StyleSMD/SMT

Maximum Operating Temperature+ 150 C

Factory Pack Quantity3000

PackagingReel

PackagingCut Tape

PackagingMouseReel

ImageDiodes Incorporated MMDT5451-7-F

BrandDiodes Incorporated

Product CategoryBipolar Transistors - BJT

RoHS Details

TARIC8541210000

DescriptionBipolar Transistors - BJT 160 / 160V 200mW

SeriesMMDT54

Product TypeBJTs - Bipolar Transistors

ManufacturerDiodes Incorporated

SubcategoryTransistors

Unit Weight0.000212 oz

USHTS8541210075

Pd - Power Dissipation200 mW

Moisture Sensitivity Level1 (Unlimited)