参数项参数值
参数项参数值
Gate-Emitter Leakage Current400 nA
Collector- Emitter Voltage VCEO Max1200 V
ConfigurationDual
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage2.1 V
Width61.4 mm
Height30.5 mm
MXHTS85412999
KRHTS8541299000
BRHTS85415020
Package / Case62 mm
JPHTS8541290100
Mounting StyleChassis Mount
CAHTS8541290000
Minimum Operating Temperature- 40 C
PackagingTray
Maximum Operating Temperature+ 150 C
Factory Pack Quantity10
ProductIGBT Silicon Modules
CNHTS8504409190
DescriptionIGBT Modules N-CH 1.2KV 580A
BrandInfineon Technologies
ImageInfineon Technologies FF450R12KT4
Product TypeIGBT Modules
TARIC8541290000
ManufacturerInfineon
Product CategoryIGBT Modules
RoHS Details
Unit Weight12 oz
SubcategoryIGBTs
Continuous Collector Current at 25 C580 A
Part # AliasesSP000370613 FF450R12KT4HOSA1
Pd - Power Dissipation2400 W
USHTS8541290095