参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current18 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance52 mOhms
Transistor Type1 N-Channel
Width4.4 mm
Height15.65 mm
Length10 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge62.7 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Channel ModeEnhancement
CNHTS8541290000
PackagingTube
ImageInfineon Technologies IRFI540NPBF
TARIC8541290000
RoHS Details
Unit Weight0.211644 oz
Factory Pack Quantity2000
Product TypeMOSFET
Pd - Power Dissipation42 W
BrandInfineon Technologies
SubcategoryMOSFETs
Product CategoryMOSFET
ManufacturerInfineon
DescriptionMOSFET MOSFT 100V 18A 52mOhm 62.7nC
Vds - Drain-Source Breakdown Voltage100 V
USHTS8541290095
Number of Channels1 Channel