参数项参数值
参数项参数值
Forward Transconductance - Min2.5 s
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage- 3 V
TechnologySi
Id - Continuous Drain Current2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Rds On - Drain-Source Resistance210 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time45 ns
CNHTS8541290000
Qg - Gate Charge7.2 nC
Package / CaseSOT-457-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time10 ns
PackagingReel
PackagingCut Tape
PackagingMouseReel
TARIC8541290000
BrandROHM Semiconductor
RoHS Details
ImageROHM Semiconductor RQ6L020SPTCR
Product CategoryMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
ManufacturerROHM Semiconductor
Product TypeMOSFET
Pd - Power Dissipation1.25 W
USHTS8541290095
DescriptionMOSFET Pch -60V 2A 1.25W SOT-457T
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time12 ns
Moisture Sensitivity Level1 (Unlimited)