参数项参数值
参数项参数值
DC Current Gain hFE Max500 at 100 mA, 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO65 V
Collector- Emitter Voltage VCEO Max20 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO7 V
Width1.7 mm
Collector-Emitter Saturation Voltage30 mV
Height1 mm
DC Collector/Base Gain hfe Min45 at 15 A, 2 V
Length3 mm
Minimum Operating Temperature- 55 C
Mounting StyleSMD/SMT
Package / CaseSOT-23F-3
Maximum Operating Temperature+ 150 C
ImageDiodes Incorporated ZXTN19020CFFTA
PackagingMouseReel
PackagingReel
PackagingCut Tape
RoHS Details
SeriesZXTN19020
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
BrandDiodes Incorporated
Product TypeBJTs - Bipolar Transistors
Unit Weight0.001721 oz
DescriptionBipolar Transistors - BJT NPN 20V 7A
ManufacturerDiodes Incorporated
Pd - Power Dissipation2000 mW