参数项参数值
参数项参数值
DC Current Gain hFE Max300
Collector- Base Voltage VCBO60 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current200 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Length1 mm
Width0.6 mm
Height0.5 mm
KRHTS8541219000
Collector-Emitter Saturation Voltage0.3 V
Minimum Operating Temperature- 55 C
JPHTS8541210101
Package / CaseX1-DFN1006-3
CAHTS8541210000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity10000
PackagingCut Tape
PackagingReel
PackagingMouseReel
BrandDiodes Incorporated
Product CategoryBipolar Transistors - BJT
RoHS Details
TARIC8541210000
DescriptionBipolar Transistors - BJT General Purpose Tran X1-DFN1006-3,10K
SeriesMMBT3904LP
Product TypeBJTs - Bipolar Transistors
ManufacturerDiodes Incorporated
SubcategoryTransistors
Unit Weight0.282192 oz
USHTS8541210095
Pd - Power Dissipation1 W
Moisture Sensitivity Level1 (Unlimited)